Effect of forward common emitter current gain on emitter area in NPN transistors
نویسندگان
چکیده
منابع مشابه
Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors
Low frequency noise characteristics of new high voltage, high performance complementary polysilicon emitter bipolar transistors have been studied. The influence of the base biasing resistance, emitter geometry, and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/f and shot noise. The pnp transistors, on the other hand, are characterized by significant gen...
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ژورنال
عنوان ژورنال: Journal of the Korea Industrial Information Systems Research
سال: 2014
ISSN: 1229-3741
DOI: 10.9723/jksiis.2014.19.2.037